MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R950C6 Data Sheet Rev. 2.5 Final Power Management & Multimarket600VCoolMOS C6 PowerTransistor IPD60R950C6, IPB60R950C6 IPP60R950C6, IPA60R950C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS C6 series combines the experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. The resulting devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. Features Extremely low losses due to very low FOM Rdson*Qg and Eoss drain Very high commutation ruggedness pin 2 Easy to use/drive Fully qualified according to JEDEC for Industrial Applications gate Pb-free plating, Halogen free mold compound pin 1 Applications source pin 3 PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom andUPS. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 KeyPerformance Parameters Parameter Value Unit V T 650 V DS j,max R 0.95 DS(on),max Q 13 nC g,typ I 12 A D,pulse E 400V 1.3 J oss Body diode di/dt 500 A/s Type /OrderingCode Package Marking RelatedLinks IPD60R950C6 PG-TO252 IFXC6 Product Brief IPB60R950C6 PG-TO263 IFX C6 Portfolio IPP60R950C6 PG-TO220 6R950C6 IFX CoolMOS Webpage IPA60R950C6 PG-TO220FullPAK IFX Design tools Rev. 2.5 Page 2 2020-05-20