IPB64N25S3-20 OptiMOS -T Power-Transistor Product Summary V 250 V DS R 20 m DS(on),max I 64 A D Features PGTO26332 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB64N25S3-20 PG-TO263-3-2 3PN2520 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 C, V =10 V Continuous drain current 64 A D C GS 1) T =100C, V =10V 46 C GS 1) I T =25C 256 Pulsed drain current D,pulse C 1) E I =27A 270 mJ Avalanche energy, single pulse AS D Avalanche current, single pulse I - 27 A AS Reverse diode dv /dt dv /dt 6kV/s V Gate source voltage -20V GS P T =25C Power dissipation 300 W tot C Operating and storage temperature T , T - -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 - - 55/175/56 Rev. 1.1 page 1 2014-09-12IPB64N25S3-20 Parameter Symbol Conditions Values Unit min. typ. max. 1), 3) Thermal characteristics R Thermal resistance, junction - case---0.5K/W thJC Thermal resistance, junction - R---62 thJA ambient, leaded SMD version, device on PCB R minimal footprint - - 62 thJA 2 2) -- 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I = 1mA 250 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =270A 2.0 3.0 4.0 GS(th) DS GS D I V =250V, V =0V Zero gate voltage drain current -0.1 1 A DSS DS GS V =250V, V =0V, DS GS - 10 100 2) T =125C j Gate-source leakage current I V =20V, V =0V - 1 100 nA GSS GS DS R V =10V, I =64A Drain-source on-state resistance - 17.5 20 m DS(on) GS D Rev. 1.1 page 2 2014-09-12