IPB80N03S4L-02 IPI80N03S4L-03, IPP80N03S4L-03 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R (SMD version) 2.4 m DS(on),max I 80 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB80N03S4L-02 PG-TO263-3-2 4N03L02 IPI80N03S4L-03 PG-TO262-3-1 4N03L03 IPP80N03S4L-03 PG-TO220-3-1 4N03L03 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 1) I T =25 C, V =10 V 80 A Continuous drain current D C GS T =100 C, C 80 2) V =10 V GS 2) I T =25 C 320 Pulsed drain current D,pulse C E I =80 A Avalanche energy, single pulse 260 mJ AS D I T =25 C Avalanche current, single pulse 80 A AS C Gate source voltage V 16 V GS Power dissipation P T =25 C 136 W tot C T , T Operating and storage temperature -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 Rev. 2.0 page 1 2007-03-09IPB80N03S4L-02 IPI80N03S4L-03, IPP80N03S4L-03 Parameter Symbol Conditions Values Unit min. typ. max. 2) Thermal characteristics Thermal resistance, junction - case R - - 1.1 K/W thJC Thermal resistance, junction - R -- 62 thJA ambient, leaded R SMD version, device on PCB minimal footprint - - 62 thJA 2 3) -- 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I = 1 mA Drain-source breakdown voltage 30 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =90 A 1.0 1.5 2.2 GS(th) DS GS D V =30 V, V =0 V, DS GS I Zero gate voltage drain current - 0.01 1 A DSS T =25 C j V =30 V, V =0 V, DS GS - 10 1000 2) T =125 C j V =18 V, V =0 V, DS GS -5 60 2) T =85 C j Gate-source leakage current I V =16 V, V =0 V - 1 100 nA GSS GS DS R V =4.5 V, I =40 A Drain-source on-state resistance - 2.8 3.2 m DS(on) GS D V =4.5 V, I =40 A, GS D - 2.5 2.9 SMD version V =10 V, I =80 A - 2.3 2.7 GS D V =10 V, I =80 A, GS D - 2.0 2.4 SMD version Rev. 2.0 page 2 2007-03-09