IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4L-04 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R (SMD version) 3.4 m DS(on),max I 80 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB80N03S4L-03 PG-TO263-3-2 4N03L03 IPI80N03S4L-04 PG-TO262-3-1 4N03L04 IPP80N03S4L-04 PG-TO220-3-1 4N03L04 Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit 1) I T =25 C, V =10 V 80 A Continuous drain current D C GS T =100 C, C 80 2) V =10 V GS 2) I T =25 C 320 Pulsed drain current D,pulse C E I =80 A Avalanche energy, single pulse 95 mJ AS D Avalanche current, single pulse I T =25 C 80 A AS C V Gate source voltage - 16 V GS P T =25 C Power dissipation 94 W tot C Operating and storage temperature T , T - -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 - - 55/175/56 Rev. 2.1 page 1 2010-03-08IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4L-04 Parameter Symbol Conditions Values Unit min. typ. max. 2) Thermal characteristics R Thermal resistance, junction - case - - - 1.6 K/W thJC Thermal resistance, junction - R ---62 thJA ambient, leaded SMD version, device on PCB R minimal footprint - - 62 thJA 2 3) -- 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0 V, I = 1 mA 30 - - V (BR)DSS GS D V V =V , I =45 A Gate threshold voltage 1.0 1.6 2.2 GS(th) DS GS D V =30 V, V =0 V, DS GS Zero gate voltage drain current I - 0.01 1 A DSS T =25 C j V =30 V, V =0 V, DS GS - 10 1000 2) T =125 C j V =18 V, V =0 V, DS GS -5 60 2) T =85 C j I V =16 V, V =0 V Gate-source leakage current - 1 100 nA GSS GS DS Drain-source on-state resistance R V =4.5 V, I =40 A - 3.9 5 m DS(on) GS D V =4.5 V, I =40 A, GS D - 3.6 4.7 SMD version V =10 V, I =80 A - 3.0 3.7 GS D V =10 V, I =80 A, GS D - 2.7 3.4 SMD version Rev. 2.1 page 2 2010-03-08