IPB80N04S3-06 IPI80N04S3-06, IPP80N04S3-06 OptiMOS -T Power-Transistor Product Summary V 40 V DS R (SMD version) 5.4 m DS(on),max I 80 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche tested Type Package Marking IPB80N04S3-06 PG-TO263-3-2 3N0406 IPI80N04S3-06 PG-TO262-3-1 3N0406 IPP80N04S3-06 PG-TO220-3-1 3N0406 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 1) I Continuous drain current T =25C, V =10V 80 A D C GS T =100 C, C 71 2) V =10 V GS 2) I T =25 C 320 Pulsed drain current D,pulse C E I =80 A Avalanche energy, single pulse 125 mJ AS D V Gate source voltage 20 V GS Power dissipation P T =25 C 100 W tot C Operating and storage temperature T , T -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 Rev. 1.1 page 1 2007-05-03IPB80N04S3-06 IPI80N04S3-06, IPP80N04S3-06 Parameter Symbol Conditions Values Unit min. typ. max. 2) Thermal characteristics Thermal resistance, junction - case R - - 1.5 K/W thJC Thermal resistance, junction - R -- 62 thJA ambient, leaded R SMD version, device on PCB minimal footprint - - 62 thJA 2 3) -- 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I = 1 mA Drain-source breakdown voltage 40 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =52 A 2.1 3.0 4.0 GS(th) DS GS D V =40 V, V =0 V, DS GS I Zero gate voltage drain current -- 1A DSS T =25 C j V =40 V, V =0 V, DS GS - - 100 2) T =125 C j I V =20 V, V =0 V Gate-source leakage current - - 100 nA GSS GS DS Drain-source on-state resistance R V =10 V, I =80 A - 4.6 5.7 m DS(on) GS D V =10 V, I =80 A, GS D - 4.3 5.4 SMD version Rev. 1.1 page 2 2007-05-03