IPB80N04S4-04
IPI80N04S4-04, IPP80N04S4-04
OptiMOS -T2 Power-Transistor
Product Summary
V 40 V
DS
R (SMD version) 4.2
m
DS(on),max
I 80 A
D
Features
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
N-channel - Enhancement mode
AEC qualified
MSL1 up to 260C peak reflow
175C operating temperature
Green Product (RoHS compliant)
100% Avalanche tested
Type Package Marking
IPB80N04S4-04 PG-TO263-3-2 4N0404
IPI80N04S4-04 PG-TO262-3-1 4N0404
IPP80N04S4-04 PG-TO220-3-1 4N0404
Maximum ratings, at T =25 C, unless otherwise specified
j
Parameter Symbol Conditions Value Unit
1)
I T =25C, V =10V
80 A
Continuous drain current D C GS
2)
80
T =100C, V =10V
C GS
2)
I T =25C 320
Pulsed drain current
D,pulse C
2)
E I =40A
100 mJ
Avalanche energy, single pulse AS D
I
Avalanche current, single pulse - 80 A
AS
Gate source voltage V - 20 V
GS
Power dissipation P T =25C 71 W
tot C
T , T
Operating and storage temperature - -55 ... +175 C
j stg
IEC climatic category; DIN IEC 68-1 - 55/175/56
Rev. 1.0 page 1 2010-04-06 IPB80N04S4-04
IPI80N04S4-04, IPP80N04S4-04
Parameter Symbol Conditions Values Unit
min. typ. max.
2)
Thermal characteristics
Thermal resistance, junction - case R - - - 2.1 K/W
thJC
Thermal resistance, junction -
R
---62
thJA
ambient, leaded
R
SMD version, device on PCB minimal footprint - - 62
thJA
2 3)
-- 40
6 cm cooling area
Electrical characteristics, at T =25 C, unless otherwise specified
j
Static characteristics
V V =0V, I = 1mA
Drain-source breakdown voltage 40 - - V
(BR)DSS GS D
Gate threshold voltage V V =V , I =35A 2.0 3.0 4.0
GS(th) DS GS D
Zero gate voltage drain current I V =40V, V =0V - 0.02 1 A
DSS DS GS
V =18V, V =0V,
DS GS
-1 20
2)
T =85C
j
I V =20V, V =0V
Gate-source leakage current - - 100 nA
GSS GS DS
Drain-source on-state resistance R V =10V, I =80A - 4.3 4.6
m
DS(on) GS D
V =10V, I =80A,
GS D
- 3.9 4.2
SMD version
Rev. 1.0 page 2 2010-04-06