IPB80N04S4L-04 IPI80N04S4L-04, IPP80N04S4L-04 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 4.0 m DS(on),max I 80 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB80N04S4L-04 PG-TO263-3-2 4N04L04 IPI80N04S4L-04 PG-TO262-3-1 4N04L04 IPP80N04S4L-04 PG-TO220-3-1 4N04L04 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 1) I T =25C, V =10V 80 A Continuous drain current D C GS 2) 80 T =100C, V =10V C GS 2) I T =25C 320 Pulsed drain current D,pulse C 2) E I =40A 100 mJ Avalanche energy, single pulse AS D I Avalanche current, single pulse - 80 A AS Gate source voltage V - +20/-16 V GS Power dissipation P T =25C 71 W tot C T , T Operating and storage temperature - -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2010-04-13 IPB80N04S4L-04 IPI80N04S4L-04, IPP80N04S4L-04 Parameter Symbol Conditions Values Unit min. typ. max. Thermal resistance, junction - case R - - - 2.1 K/W thJC Thermal resistance, junction - R ---62 thJA ambient, leaded R SMD version, device on PCB minimal footprint - - 62 thJA 2 3) -- 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I = 1mA Drain-source breakdown voltage 40 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =35A 1.2 1.7 2.2 GS(th) DS GS D Zero gate voltage drain current I V =40V, V =0V - 0.02 1 A DSS DS GS V =18V, V =0V, DS GS -1 20 2) T =85C j I V =20V, V =0V Gate-source leakage current - - 100 nA GSS GS DS Drain-source on-state resistance R V =4.5V, I =40A - 5.1 6 m DS(on) GS D V =4.5V, I =40A, GS D - 4.8 5.7 SMD version V =10 V, I =80 A - 3.7 4.3 GS D V =10 V, I =80 A, GS D - 3.4 4.0 SMD version Rev. 1.0 page 2 2010-04-13