IPB80N06S2L-09 IPP80N06S2L-09 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 8.3 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Ordering Code Marking IPB80N06S2L-09 PG-TO263-3-2 SP0002-18743 2N06L09 IPP80N06S2L-09 PG-TO220-3-1 SP0002-18742 2N06L09 Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit 1) I T =25 C, V =10 V 80 A Continuous drain current D C GS T =100 C, C 73 2) V =10 V GS 2) I T =25 C 320 Pulsed drain current D,pulse C 2) E I = 80 A 370 mJ Avalanche energy, single pulse AS D 4) V 20 V Gate source voltage GS P T =25 C Power dissipation 190 W tot C T , T Operating and storage temperature -55 ... +175 C j stg Rev. 1.0 page 1 2006-03-13 IPB80N06S2L-09 IPP80N06S2L-09 Parameter Symbol Conditions Values Unit min. typ. max. 2) Thermal characteristics Thermal resistance, junction - case R - - 0.8 K/W thJC Thermal resistance, junction - R -- 62 thJA ambient, leaded R SMD version, device on PCB minimal footprint - - 62 thJA 2 5) -- 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I = 1 mA Drain-source breakdown voltage 55 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =125 A 1.2 1.6 2.0 GS(th) DS GS D V =55 V, V =0 V, DS GS I Zero gate voltage drain current - 0.01 1 A DSS T =25 C j V =55 V, V =0 V, DS GS - 1 100 2) T =125 C j I V =20 V, V =0 V Gate-source leakage current - 1 100 nA GSS GS DS Drain-source on-state resistance R V =4.5 V, I =52 A - 8.4 11.3 m DS(on) GS D V =4.5 V, I =52 A, GS D - 8.1 11 SMD version R V =10 V, I =52 A, Drain-source on-state resistance - 6.9 8.5 m DS(on) GS D V =10 V, I =52 A, GS D - 6.6 8.2 SMD version Rev. 1.0 page 2 2006-03-13