IPC60N04S4-06 TM OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 6.0 m DS(on) I 60 A D Features N-channel - Enhancement mode PG-TDSON-8-23 AEC qualified MSL1 up to 260C peak reflow Green product (RoHS compliant) 1 100% Avalanche tested 1 Feasible for automatic optical inspection (AOI) Type Package Marking IPC60N04S4-06 PG-TDSON-8-23 4N0406 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit T =25C, C 1) I T =175C, Continuous drain current A D J 60 V =10V GS T =100 C, C 1, 2) T =175C, 58 J V =10 V GS 2) I T =25 C 240 Pulsed drain current D,pulse C Avalanche energy, single pulse E I =30 A 120 mJ AS D I Avalanche current, single pulse - 60 A AS V Gate source voltage -+/-20V GS T =25 C, C P Power dissipation 63 W tot T =175C J 3) T , T Operating and storage temperature - C j stg -55 ... +175 Rev. 1.0 page 1 2015-05-22IPC60N04S4-06 Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R---2.4K/W thJC Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I = 1 mA Drain-source breakdown voltage 40 - - V (BR)DSS GS D Gate threshold voltage V V =V , I = 30A 2.0 3.0 4.0 GS(th) DS GS D V =40 V, V =0 V, DS GS I Zero gate voltage drain current -0.01 1 A DSS T =25 C j V =18 V, V =0 V, DS GS -1 20 2) T =85 C j I V =20 V, V =0 V Gate-source leakage current - - 100 nA GSS GS DS Drain-source on-state resistance R V =10 V, I = 30A -5.4 6.0 m DS(on) GS D Rev. 1.0 page 2 2015-05-22