X-On Electronics has gained recognition as a prominent supplier of IPC90N04S53R6ATMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPC90N04S53R6ATMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPC90N04S53R6ATMA1 Infineon

IPC90N04S53R6ATMA1 electronic component of Infineon
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See Product Specifications
Part No.IPC90N04S53R6ATMA1
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET MOSFET_(20V,40V)
Datasheet: IPC90N04S53R6ATMA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8752 ea
Line Total: USD 0.88 
Availability - 5287
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5287
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 0.8752
10 : USD 0.7325
100 : USD 0.5382
500 : USD 0.4439
1000 : USD 0.4094
5000 : USD 0.4094
10000 : USD 0.3933
25000 : USD 0.3921

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Configuration
Series
Transistor Type
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the IPC90N04S53R6ATMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPC90N04S53R6ATMA1 and other electronic components in the MOSFETs category and beyond.

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IPC90N04S5-3R6 OptiMOS -5 Power-Transistor Product Summary V 40 V DS R 3.6 mW DS(on),max I 90 A D Features PG-TDSON-8-33 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260C peak reflow 1 175C operating temperature 1 Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPC90N04S5-3R6 PG-TDSON-8-33 5N043R6 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 1) I T =25 C, V =10 V 90 A Continuous drain current D C GS 2) 68 T =100C, V =10V C GS 2) I T =25C 360 Pulsed drain current D,pulse C 2) E I =45A 40 mJ Avalanche energy, single pulse AS D 4) I - 90 A Avalanche current, single pulse AS Gate source voltage V - 20 V GS Power dissipation P T =25C 63 W tot C T , T Operating and storage temperature - -55 ... +175 C j stg Rev. 1.0 page 1 2016-12-06 IPC90N04S5-3R6 Parameter Symbol Conditions Values Unit min. typ. max. 2) Thermal characteristics Thermal resistance, junction - case R - - - 2.4 K/W thJC Thermal resistance, junction - 2 3) R - - 50 thJA 6 cm cooling area ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I = 1mA 40 - - V (BR)DSS GS D V V =V , I =23A Gate threshold voltage 2.2 2.8 3.4 GS(th) DS GS D V =40V, V =0V, DS GS Zero gate voltage drain current I - - 1 A DSS T =25C j V =40V, V =0V, DS GS - - 100 1) T =125C j Gate-source leakage current I V =20V, V =0V - - 100 nA GSS GS DS R V =7V, I =45A Drain-source on-state resistance - 3.6 4.4 mW DS(on) GS D V =10V, I =45A - 3 3.6 GS D Rev. 1.0 page 2 2016-12-06

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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