IPD053N08N3 G OptiMOS 3 Power-Transistor Product Summary Features V 80 V DS N-channel, normal level R 5.3 mW DS(on),max Excellent gate charge x R product (FOM) DS(on) I 90 A D Very low on-resistance R DS(on) 175 C operating temperature previous engineering Pb-free lead plating RoHS compliant sample code: 1) IPD06CN08N Qualified according to JEDEC for target application Ideal for high-frequency switching and synchronous rectification Halogen-free according to IEC61249-2-21 Type IPD053N08N3 G Package PG-TO252-3 Marking 053N08N Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit 2) Continuous drain current I 90 A T =25C D C T =100C 90 C 2) I T =25C 360 Pulsed drain current D,pulse C Avalanche energy, single pulse E I =90A, R =25W 190 mJ AS D GS Gate source voltage V 20 V GS P T =25C Power dissipation 150 W tot C T , T Operating and storage temperature -55 ... 175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 Rev. 1.1 page 1 2014-05-19IPD053N08N3 G Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 1 K/W thJC Thermal resistance, R minimal footprint - - 75 thJA 2 3) junction - ambient - - 50 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I =1mA 80 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =90A 2 2.8 3.5 GS(th) DS GS D V =80V, V =0V, DS GS Zero gate voltage drain current I - 0.1 1 A DSS T =25C j V =80V, V =0V, DS GS - 10 100 T =125C j Gate-source leakage current I V =20V, V =0V - 1 100 nA GSS GS DS R V =10V, I =90A Drain-source on-state resistance - 4.4 5.3 mW DS(on) GS D V =6V, I =45A - 5.8 9.5 GS D R Gate resistance - 2.2 - W G V >2 I R , DS D DS(on)max g Transconductance 56 111 - S fs I =90A D 1) J-STD20 and JESD22 2) See figure 3 3) Device on 40 mm x 40 mm x 1.5 mm 2 epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain Rev. 1.1 page 2 2014-05-19