X-On Electronics has gained recognition as a prominent supplier of IPD082N10N3G MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPD082N10N3G MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPD082N10N3G Infineon

Name: IPD082N10N3G
Brand: Infineon
SKU: IPD082N10N3G_Infineon
Availability: InStock
Rating: 5 (11 reviews)

IPD082N10N3G electronic component of Infineon

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See Product Specifications

Part No.	IPD082N10N3G
Manufacturer:	Infineon
Category:	MOSFETs
Description:	MOSFET N Trench 100V 80A 3.5V @ 75uA 8.6 mÎ© @ 73A,10V TO-252-2 (DPAK) RoHS
Datasheet:	IPD082N10N3G Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 2.0709 ea
Line Total: USD 2.07

Availability - 885
Ship by Mon. 06 Jan to Thu. 09 Jan

MOQ: 1 Multiples: 1
Pack Size: 1

IPD082N10N3G More Buying Options & Price Grid(s)

Please wait...

Availability Price Buy Price Quantity

885

Ship by Mon. 06 Jan to Thu. 09 Jan

MOQ : 1
Multiples : 1

1 : USD 2.0709
10 : USD 1.7927
30 : USD 1.618
100 : USD 1.2917
500 : USD 1.2112
1000 : USD 1.1765

Specifications

Manufacturer
Infineon Infineon

Product Category
MOSFETs MOSFETs

Category
MOSFET MOSFET

Rohs
y y

Package
TO - 252 - 2 (DPAK) TO - 252 - 2 (DPAK)

Brand Category
Infineon Infineon

Fet Type
n trench n trench

Drain To Source Voltagevdss
100 V 100 V

Continuous Drain Current Id @ 25°C
80 A 80 A

Vgsth Max @ Id
3.5 V @ 75u A 3.5 V @ 75u A

Rds On Max @ Id Vgs
8.6 m @ 73a,10v 8.6 m @ 73a,10v

Power Dissipation-Max Ta
125 W 125 W

Drain Source Voltage Vdss
100 V 100 V

Continuous Drain Current Id
80 A 80 A

Drain Source On Resistance Rdson@Vgs Id
8.6 mOhms @10V , 73A 8.6 mOhms @10V , 73A

Power Dissipation Pd
125 W 125 W

Gate Threshold Voltage Vgsth@Id
3.5 V @75uA 3.5 V @75uA

Reverse Transfer Capacitance Crss@Vds
- -

Type
N Channel N Channel

Input Capacitance Ciss@Vds
- -

Total Gate Charge Qg@Vgs
- -

Operating Temperature
- -

Notes:- Show Stocked Products With Similar Attributes.

IPD082N10N3G Alternative Parts

We are delighted to provide the IPD082N10N3G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPD082N10N3G and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

.The IPD082N10N3G is a N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) manufactured by Infineon. It has a 100V drain-to-source voltage (Vds), and is rated for 80A current at 3.5V gate threshold voltage (Vgs). It has a low on-state resistance (Rds) of 8.6 milliohm at 73A, and a low gate charge (Qg) of 75uA at 10V. The device is packaged in a TO-252-2 (DPAK) package, which is RoHS compliant, compatible with lead-free printed circuit boards.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
885 Ship by Mon. 06 Jan to Thu. 09 Jan MOQ : 1 Multiples : 1	1 : USD 2.0709 10 : USD 1.7927 30 : USD 1.618 100 : USD 1.2917 500 : USD 1.2112 1000 : USD 1.1765

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