IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS 2 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R (TO252) 12.4 mW DS(on),max Excellent gate charge x R product (FOM) DS(on) I 67 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating RoHS compliant 1) Qualified according to JEDEC for target application Ideal for high-frequency switching and synchronous rectification Halogen-free according to IEC61249-2-21 Type IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G Package PG-TO263-3 PG-TO252-3 PG-TO262-3 PG-TO220-3 Marking 12CN10N 12CN10N 12CN10N 12CN10N Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I T =25C 67 A D C T =100C 48 C 2) I T =25C 268 Pulsed drain current D,pulse C E I =67A, R =25W Avalanche energy, single pulse 154 mJ AS D GS I =67A, V =80V, D DS Reverse diode dv /dt dv /dt di /dt =100A/s, 6 kV/s T =175C j,max 3) V 20 V Gate source voltage GS P T =25C Power dissipation 125 W tot C Operating and storage temperature T , T -55 ... 175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 1) J-STD20 and JESD22 2) see figure 3 3) T =150C and duty cycle D=0.01 for V <-5V jmax gs Rev. 1.08 page 1 2013-07-09IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 1.2 K/W thJC R minimal footprint - - 62 thJA Thermal resistance, junction - ambient (TO220, TO262, TO263) 4) - - 40 6 cm2 cooling area minimal footprint - - 75 Thermal resistance, junction - ambient (TO252) 4) - - 50 6 cm2 cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I =1mA Drain-source breakdown voltage 100 - - V (BR)DSS GS D V V =V , I =83A Gate threshold voltage 2 3 4 GS(th) DS GS D V =80V, V =0V, DS GS I Zero gate voltage drain current - 0.1 1 A DSS T =25C j V =80V, V =0V, DS GS - 10 100 T =125C j I V =20V, V =0V Gate-source leakage current - 1 100 nA GSS GS DS V =10V, I =67A, GS D R Drain-source on-state resistance - 9.3 12.4 mW DS(on) (TO252) V =10V, I =67A, GS D - 9.5 12.6 (TO263) V =10V, I =67A, GS D - 9.8 12.9 (TO220, TO262) Gate resistance R - 1.5 - W G V >2 I R , DS D DS(on)max g Transconductance 39 77 - S fs I =67A D 4) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.08 page 2 2013-07-09