IPD135N08N3 G (TM) OptiMOS 3 Power-Transistor Product Summary Features V 80 V DS Ideal for high frequency switching R 13.5 mW DS(on),max Optimized technology for DC/DC converters I 45 A D Excellent gate charge x R product (FOM) DS(on) N-channel, normal level 100% avalanche tested Pb-free plating RoHS compliant 1) Qualified according to JEDEC for target applications Halogen-free according to IEC61249-2-21 Type IPD135N08N3 G Package PG-TO-252-3 Marking 135N08N Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit 2) Continuous drain current I 45 A T =25C D C T =100C 39 C 2) I T =25C 180 Pulsed drain current D,pulse C 3) E I =45A, R =25W 50 mJ Avalanche energy, single pulse AS D GS Gate source voltage V 20 V GS P T =25C Power dissipation 79 W tot C T , T Operating and storage temperature -55 ... 175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 1) J-STD20 and JESD22 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information Rev. 2.2 page 1 2014-05-19IPD135N08N3 G Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 1.9 K/W thJC Thermal resistance, R minimal footprint - - 62 thJA 2 4) junction - ambient - - 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I =1mA 80 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =33A 2 2.8 3.5 GS(th) DS GS D V =80V, V =0V, DS GS Zero gate voltage drain current I - 0.1 1 A DSS T =25C j V =80V, V =0V, DS GS - 10 100 T =125C j Gate-source leakage current I V =20V, V =0V - 1 100 nA GSS GS DS R V =10V, I =45A Drain-source on-state resistance - 11.4 13.5 mW DS(on) GS D V =6V, I =22.5A - 16.0 26 GS D Gate resistance R - 2 - W G V >2 I R , DS D DS(on)max g Transconductance 24 48 - S fs I =45A D 4) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.2 page 2 2014-05-19