IPD50N04S4L-08 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 7.3 m DS(on),max I 50 A D Features N-channel - Enhancement mode PG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N04S4-08 PG-TO252-3-313 4N04L08 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 1) I T =25C, V =10V 50 A Continuous drain current D C GS 2) 49 T =100C, V =10V C GS 2) I T =25C 200 Pulsed drain current D,pulse C 2) E I =25A 55 mJ Avalanche energy, single pulse AS D I Avalanche current, single pulse - 50 A AS Gate source voltage V - +20/-16 V GS Power dissipation P T =25C 46 W tot C T , T Operating and storage temperature - -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2010-04-06 IPD50N04S4L-08 Parameter Symbol Conditions Values Unit min. typ. max. 2) Thermal characteristics Thermal resistance, junction - case R - - - 3.3 K/W thJC Thermal resistance, junction - R ---62 thJA ambient, leaded R SMD version, device on PCB minimal footprint - - 62 thJA 2 3) -- 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I = 1mA Drain-source breakdown voltage 40 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =17A 1.2 1.7 2.2 GS(th) DS GS D V =40V, V =0V, DS GS I Zero gate voltage drain current - 0.01 1 A DSS T =25C j V =18V, V =0V, DS GS -1 20 2) T =85C j I V =20V, V =0V Gate-source leakage current - - 100 nA GSS GS DS Drain-source on-state resistance R V =4.5V, I =25A - 8.8 10.5 m DS(on) GS D V =10 V, I =50 A - 6.2 7.3 GS D Rev. 1.0 page 2 2010-04-06