The Infineon IPD50N06S2L13ATMA2 is a MOSFET N-Channel 55/60V power semiconductor device. It is constructed with a number of different materials, including a Silicon body with a polysilicon gate, an insulated gate oxide layer, a drain oxide layer, and a source oxide layer. The high current capability of the device makes it suitable for a range of applications, such as power switching, high frequency switching, and current sensing. This device is rated for an avarage drain current of 50A, and a drain-source voltage of up to 60V. The maximum on-state RDS-on of the device is 13mO, and it taakes a gate drive voltage of 10V. The package of the IPD50N06S2L13ATMA2 is Power-SO-8 IPS Advanced.