IPD50N06S4L-12 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 12 m DS(on),max I 50 A D Features PG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N06S4L-12 PG-TO252-3-11 4N06L12 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25C, V =10V Continuous drain current 50 A D C GS 2) 36 T =100C, V =10V C GS 1) I T =25C 200 Pulsed drain current D,pulse C 1) E I =25A 33 mJ Avalanche energy, single pulse AS D I Avalanche current, single pulse - 50 A AS Gate source voltage V - 16 V GS Power dissipation P T =25C 50 W tot C T , T Operating and storage temperature - -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2009-03-23 IPD50N06S4L-12 Parameter Symbol Conditions Values Unit min. typ. max. 1) Thermal characteristics Thermal resistance, junction - case R - - - 3.0 K/W thJC R SMD version, device on PCB minimal footprint - - 62 thJA 2 2) -- 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I = 1mA Drain-source breakdown voltage 60 - - V (BR)DSS GS D V V =V , I =20A Gate threshold voltage 1.2 1.7 2.2 GS(th) DS GS D V =60V, V =0V, DS GS I Zero gate voltage drain current - 0.01 1 A DSS T =25C j V =60V, V =0V, DS GS - 5 100 2) T =125C j I V =16V, V =0V Gate-source leakage current - - 100 nA GSS GS DS R V =4.5V, I =25A Drain-source on-state resistance - 14.6 21.6 m DS(on) GS D V =10V, I =50A - 9.6 12.0 GS D Rev. 1.0 page 2 2009-03-23