IPD50P03P4L-11 OptiMOS -P2 Power-Transistor Product Summary V -30 V DS R 10.5 m DS(on),max I -50 A D Features PG-TO252-3-11 P-channel - Logic Level - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Intended for reverse battery protection Type Package Marking IPD50P03P4L-11 PG-TO252-3-11 4P03L11 Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit T =25C, C I Continuous drain current -50 A D 1) V =-10V GS T =100C, C -42 2) V =-10V GS 2) I T =25C -200 Pulsed drain current D,pulse C Avalanche energy, single pulse E I = -25A 100 mJ AS D I Avalanche current, single pulse - -50 A AS V Gate source voltage - +5/-16 V GS Power dissipation P T =25C 58 W tot C T , T Operating and storage temperature - -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 - - 55/175/56 Rev. 1.1 page 1 2009-07-29 IPD50P03P4L-11 Parameter Symbol Conditions Values Unit min. typ. max. 2) Thermal characteristics Thermal resistance, junction - case R - - - 2.6 K/W thJC R SMD version, device on PCB minimal footprint - - 62 thJA 2 3) -- 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I = -1mA Drain-source breakdown voltage -30 - - V (BR)DSS GS D V V =V , I =-85A Gate threshold voltage -1.0 -1.5 -2.0 GS(th) DS GS D V =-24V, V =0V, DS GS I Zero gate voltage drain current - -0.02 -1 A DSS T =25C j V =-24V, V =0V, DS GS - -7 -70 2) T =125C j I V =-16V, V =0V Gate-source leakage current - - -100 nA GSS GS DS R V =-4.5V, I =-25A Drain-source on-state resistance - 13.0 18.0 m DS(on) GS D V =-10V, I =-50A - 8.3 10.5 GS D Rev. 1.1 page 2 2009-07-29