IPD5N25S3-430 OptiMOS -T Power-Transistor Product Summary V 250 V DS R 430 mW DS(on),max I 5 A D Features N-channel - Enhancement mode PG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD5N25S3-430 PG-TO252-3- 3N25430 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25C, V =10V Continuous drain current 5 A D C GS 1) T =100C, V =10V 4 C GS 1) I T =25C 20 Pulsed drain current D,pulse C 1) E I =1.3A 13 mJ Avalanche energy, single pulse AS D I Avalanche current, single pulse - 1.3 A AS Reverse diode dv /dt dv /dt 6 kV/s Gate source voltage V - 20 V GS P T =25C Power dissipation 41 W tot C T , T Operating and storage temperature - -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2012-10-18IPD5N25S3-430 Parameter Symbol Conditions Values Unit min. typ. max. 1) Thermal characteristics Thermal resistance, junction - case R - - - 3.7 K/W thJC R SMD version, device on PCB minimal footprint - - 40 thJA 2 2) - - 62 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I = 1mA Drain-source breakdown voltage 250 - - V (BR)DSS GS D V V =V , I =13A Gate threshold voltage 2.0 3.0 4.0 GS(th) DS GS D V =250V, V =0V, DS GS I Zero gate voltage drain current - 0.1 1 A DSS T =25C j V =250V, V =0V, DS GS - 10 100 2) T =125C j I V =20V, V =0V Gate-source leakage current - 1 100 nA GSS GS DS R V =10V, I =5A Drain-source on-state resistance - 370 430 mW DS(on) GS D Rev. 1.0 page 2 2012-10-18