IPD60N10S4L-12 TM OptiMOS -T2 Power-Transistor Product Summary V 100 V DS R 12 mW DS(on),max I 60 A D Features N-channel - Enhancement mode PG-TO252-3-313 AEC qualified TAB MSL1 up to 260C peak reflow 175C operating temperature 1 3 Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD60N10S4L-12 PG-TO252-3-313 4N10L12 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25C, V =10V Continuous drain current 60 A D C GS 1) 43 T =100C, V =10V C GS 1) I T =25C 240 Pulsed drain current D,pulse C 1) E I =30A 120 mJ Avalanche energy, single pulse AS D I Avalanche current, single pulse - 40 A AS Gate source voltage V - +/-16 V GS Power dissipation P T =25C 94 W tot C T , T Operating and storage temperature - -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2011-11-30IPD60N10S4L-12 Parameter Symbol Conditions Values Unit min. typ. max. 1) Thermal characteristics Thermal resistance, junction - case R - - 1.6 K/W thJC Thermal resistance, junction - R - - 62 thJA ambient, leaded R SMD version, device on PCB minimal footprint - - 62 thJA 2 2) - - 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I =1mA Drain-source breakdown voltage 100 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =46A 1.1 1.6 2.1 GS(th) DS GS D Zero gate voltage drain current I V =100V, V =0V - 0.01 1 A DSS DS GS V =100V, V =0V, DS GS - 1 100 2) T =125C j I V =20V, V =0V Gate-source leakage current - - 100 nA GSS GS DS Drain-source on-state resistance R V =4.5V, I =30A - 12.3 15 mW DS(on) GS D V =10V, I =60A - 9.8 12 GS D Rev. 1.0 page 2 2011-11-30