MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor lPD60R2KOC6 Data Sheet Rev. 2.1 Final Industrial & Multimarket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fba%JZ8E bff PJ N W 3<IP > :FDDLK8K FEIL>>< E<JJ =6 W 8JPKFLJ< I M< + s D > = HL8C = < -9 =I<<GC8K E> X ZLN =6 Halogen free mold compound 4YYURLJ RXW - JK8><J 8I JN K: E>-4+JK8><J8E I<JFE8EKJN K: E>-4+JK8><J =FI< > - 0 CM<I9FO 8GK<I * -13 * > K E> 0<IM<I 1<C<:FD and2-0 % )./92 2E&2>3<>:. 02&.>.:2 2> BJZJVN NZ GJU N FWR ( 0/* O >L & Tk * ,(* >L ba & Tk % 0(1 a= Z&glc 0 >&ch fX 3 ( bff F P F < +)W, /** )yf )E=2 %>12>6 4 <12 &.08.42 .>86 4 29. 21 6 8 CI>0*K,E*=0 IA MH,/, 0K,E*=0 5 -IF L:K I <= C 5 -FIK=FC F 5 FFC+,04<9G8>< 5 <J >EKFFCJ ( 01 8E ( 0 E88K80 <<K /<M Final Data Sheet Rev 2.1, 2015-11-12