MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R600P6 Data Sheet Rev. 2.2 Final Power Management & Multimarket600V CoolMOS P6 Power Transistor IPB60R600P6, IPP60R600P6, IPA60R600P6, IPD60R600P6 DPAK TO-220 TO-220 FP 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS P6 series combines the 1 3 experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET DPAK while not sacrificing ease of use. Extremely low switching and conduction tab losses make switching applications even more efficient, more compact, lighter and cooler. 2 1 3 Features Increased MOSFET dv/dt ruggedness Extremely low losses due to very low FOM Rdson*Qg and Eoss Drain Very high commutation ruggedness Pin 2, Tab Easy to use/drive Pb-free plating, Halogen free mold compound Gate Qualified for industrial grade applications according to JEDEC (J-STD20 Pin 1 and JESD22) Source Pin 3 Applications PFC stages, hard switching PWM stages and resonant switching stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit VDS Tj,max 650 V R 600 m DS(on),max Q 12 nC g.typ I 18 A D,pulse E 400V 1.8 J oss Body diode di/dt 500 A/s Type / Ordering Code Package Marking Related Links IPB60R600P6 PG-TO 263 IPP60R600P6 PG-TO 220 6R600P6 see Appendix A IPA60R600P6 PG-TO 220 FullPAK IPD60R600P6 PG-TO 252 Final Data Sheet 2 Rev. 2.2, 2015-07-10