IPD65R190C7 MOSFET DPAK 650V CoolMOS C7 Power Device CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching superjunction MOSFETs offering 2 1 better efficiency, reduced gate charge, easy implementation and outstanding reliability. 3 Features Increased MOSFET dv/dt ruggedness Drain Pin 2, Tab Better efficiency due to best in class FOM R *E and R *Q DS(on) oss DS(on) g Best in class R /package DS(on) Easy to use/drive *1 Gate Pb-free plating, halogen free mold compound Pin 1 Source *1: Internal body diode Pin 3 Benefits Enabling higher system efficiency Enabling higher frequency / increased power density solutions System cost / size savings due to reduced cooling requirements Higher system reliability due to lower operating temperatures Potential applications PFC stages and hard switching PWM stages for e.g. Computing, Server, Telecom, UPS and Solar. Product validation Fully qualified according to JEDEC for Industrial Applications Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit V T 700 V DS j,max R 190 m DS(on),max Qg.typ 23 nC I 49 A D,pulse E 400V 2.7 J oss Body diode di/dt 55 A/s Type / Ordering Code Package Marking Related Links IPD65R190C7 PG-TO252-3 65C7190 see Appendix A Final Data Sheet 1 Rev. 2.2, 2020-05-26650V CoolMOS C7 Power Device IPD65R190C7 Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 4 Electrical characteristics . 5 Electrical characteristics diagrams . 7 Test Circuits . 11 Package Outlines . 12 Appendix A 13 Revision History 14 Trademarks . 14 Disclaimer 14 Final Data Sheet 2 Rev. 2.2, 2020-05-26