IPD65R1K0CEAUMA1 Infineon

IPD65R1K0CE MOSFET DPAK 650V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching Superjunction MOSFET while not sacrificing ease of use and 2 1 offering the best cost down performance ratio available on the market. 3 Features Extremely low losses due to very low FOM Rdson*Qg and Eoss Very high commutation ruggedness Drain Easy to use/drive Pin 2, Tab Pb-free plating, Halogen free mold compound Qualified for standard grade applications Gate Pin 1 Applications Source Pin 3 PC Silverbox, Adapters, LCD & PDP TV and indoor Lighting Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit V T 700 V DS j,max R 1000 m DS(on),max Id.typ 7.2 A Qg.typ 15.3 nC I 12 A D,pulse E 400V 1.5 J oss Type / Ordering Code Package Marking Related Links IPD65R1K0CE PG-TO 252 65S1K0CE see Appendix A Final Data Sheet 1 Rev. 2.0, 2016-02-26650V CoolMOS CE Power Transistor IPD65R1K0CE Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 4 Electrical characteristics . 5 Electrical characteristics diagrams . 7 Test Circuits . 11 Package Outlines . 12 Appendix A 13 Revision History 14 Trademarks . 14 Disclaimer 14 Final Data Sheet 2 Rev. 2.0, 2016-02-26