IPD65R660CFDA MOSFET DPAK 650V CoolMOS CFDA Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS CFDA series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode. This combination of extremely low switching, commutation and 2 1 conduction losses together with highest robustness make especially resonant switching applications more reliable, more efficient, lighter, and 3 cooler. Features Drain Pin 2 Ultra-fast body diode Very high commutation ruggedness Extremely low losses due to very low FOM Rdson*Qg and Eoss Gate Easy to use/drive Pin 1 Qualified according to AEC Q101 Source Green package (RoHS compliant), Pb-free plating, halogen free for mold Pin 3 compound Applications 650V CoolMOS CFDA is designed for switching applications. Table 1 Key Performance Parameters Parameter Value Unit V 650 V DS RDS(on),max 0.66 Qg,typ 20 nC ID,pulse 17 A Eoss 400V 1.8 J Body diode di/dt 900 A/s Qrr 0.2 C trr 65 ns Irrm 4.5 A Type / Ordering Code Package Marking Related Links IPD65R660CFDA PG-TO 252 65F660A - Final Data Sheet 1 Rev. 2.2, 2016-04-18650V CoolMOS CFDA Power Transistor IPD65R660CFDA Table of Contents Description . 1 Table of Contents 2 Maximum ratings 3 Thermal characteristics 4 Electrical characteristics . 5 Electrical characteristics diagrams . 7 Test Circuits . 11 Package Outlines . 12 Revision History 13 Trademarks . 13 Disclaimer 13 Final Data Sheet 2 Rev. 2.2, 2016-04-18