IPD70N10S3-12 OptiMOS -T Power-Transistor Product Summary V 100 V DS R 11.1 mW DS(on),max I 70 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD70N10S3-12 PG-TO252-3-11 QN1012 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25C, V =10V Continuous drain current 70 A D C GS 1) 48 T =100C, V =10V C GS 1) I T =25C 280 Pulsed drain current D,pulse C 1) E I =35A 410 mJ Avalanche energy, single pulse AS D I Avalanche current, single pulse 70 A AS Gate source voltage V 20 V GS Power dissipation P T =25 C 125 W tot C T , T Operating and storage temperature -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 Rev. 1.1 page 1 2011-10-06IPD70N10S3-12 Parameter Symbol Conditions Values Unit min. typ. max. 1) Thermal characteristics Thermal resistance, junction - case R - - 1.2 K/W thJC R SMD version, device on PCB minimal footprint - - 62 thJA 2 2) - - 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I = 1mA Drain-source breakdown voltage 100 - - V (BR)DSS GS D V V =V , I =83A Gate threshold voltage 2.0 3.0 4.0 GS(th) DS GS D V =80V, V =0V, DS GS I Zero gate voltage drain current - 0.01 0.1 A DSS T =25C j V =80V, V =0V, DS GS - 0.1 10 1) T =125C j I V =20V, V =0V Gate-source leakage current - - 100 nA GSS GS DS R V =10V, I =70A Drain-source on-state resistance - 9.2 11.1 mW DS(on) GS D Rev. 1.1 page 2 2011-10-06