IPD70N12S3L-12 OptiMOS -T Power-Transistor Product Summary V 120 V DS R 11.5 mW DS(on),max I 70 A D Features OptiMOS - power MOSFET for automotive applications PG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD70N12S3L-12 PG-TO252-3-11 QN12L12 Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I T =25C, V =10V 70 A D C GS 1) T =100C, V =10V 48 C GS 1) I T =25C 280 Pulsed drain current D,pulse C 1) E I =35A 410 mJ Avalanche energy, single pulse AS D Avalanche current, single pulse I - 70 A AS V Gate source voltage - 20 V GS P T =25C Power dissipation 125 W tot C Operating and storage temperature T , T - -55 ... +175 C j stg Rev. 1.0 page 1 2016-06-20 IPD70N12S3L-12 Values Parameter Symbol Conditions Unit min. typ. max. 1) Thermal characteristics R Thermal resistance, junction - case - - - 1.2 K/W thJC R SMD version, device on PCB minimal footprint - - 62 thJA 2 2) - - 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I = 1mA Drain-source breakdown voltage 120 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =83A 1.2 1.7 2.4 GS(th) DS GS D V =120V, V =0V, DS GS Zero gate voltage drain current I - 0.01 0.1 A DSS T =25C j V =120V, V =0V, DS GS - 1 10 1) T =125C j Gate-source leakage current I V =20V, V =0V - - 100 nA GSS GS DS R V =4.5V, I =70A Drain-source on-state resistance - 11.7 15.2 mW DS(on) GS D V =10V, I =70A - 9.6 11.5 GS D Rev. 1.0 page 2 2016-06-20