IPD70P04P4L-08 OptiMOS -P2 Power-Transistor Product Summary V -40 V DS R 7.8 m W DS(on) I -70 A D Features P-channel - Logic Level - Enhancement mode AEC qualified PG-TO252-3-313 MSL1 up to 260C peak reflow Tab 175C operating temperature Green package (RoHS compliant) 1 3 100% Avalanche tested Source pin 3 Gate pin 1 Type Package Marking Drain pin 2/Tab IPD70P04P4L-08 PG-TO252-3-313 4P04L08 Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit T =25C, C I Continuous drain current -70 A D V =-10V GS T =100C, C -55 1) V =-10V GS 1) I T =25C -280 Pulsed drain current D,pulse C 1) E I =-35A 24 mJ Avalanche energy, single pulse AS D I Avalanche current, single pulse - -70 A AS V Gate source voltage - +5/-16 V GS P T =25C Power dissipation 75 W tot C Operating and storage temperature T , T - -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 - - 55/175/56 Rev. 1.2 page 1 2011-03-14IPD70P04P4L-08 Values Parameter Symbol Conditions Unit min. typ. max. 1) Thermal characteristics R Thermal resistance, junction - case - - - 2.0 K/W thJC R SMD version, device on PCB minimal footprint - - 62 thJA 2 2) - - 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I = -1mA Drain-source breakdown voltage -40 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =-120A -1.2 -1.7 -2.2 GS(th) DS GS D V =-32V, V =0V, DS GS Zero gate voltage drain current I - -0.05 -1 A DSS T =25C j V =-32V, V =0V, DS GS - -20 -200 1) T =125C j Gate-source leakage current I V =-16V, V =0V - - -100 nA GSS GS DS R V =-4.5V, I =-40A Drain-source on-state resistance - 9.5 12.9 m W DS(on) GS D V =-10V, I =-70A - 6.4 7.8 GS D Rev. 1.2 page 2 2011-03-14