IPD80P03P4L-07 OptiMOS -P2 Power-Transistor Product Summary V -30 V DS R 6.8 mW DS(on) I -80 A D Features P-channel - Logic Level - Enhancement mode PG-TO252-3-11 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche tested Intended for reverse battery protection Type Package Marking IPD80P03P4L-07 PG-TO252-3-11 4P03L07 Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit T =25C, C I Continuous drain current -80 A D 1) V =-10V GS T =100C, C -65 2) V =-10V GS 2) I T =25C -320 Pulsed drain current D,pulse C E I =-40A Avalanche energy, single pulse 135 mJ AS D Avalanche current, single pulse I - -80 A AS V Gate source voltage - +5/-16 V GS Power dissipation P T =25C 88 W tot C T , T Operating and storage temperature - -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 - - 55/175/56 Rev. 2.0 page 1 2018-02-15IPD80P03P4L-07 Values Parameter Symbol Conditions Unit min. typ. max. 2) Thermal characteristics R Thermal resistance, junction - case - - - 1.7 K/W thJC R SMD version, device on PCB minimal footprint - - 62 thJA 2 3) 6 cm cooling area - - 40 Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I = -1mA -30 - - V (BR)DSS GS D V V =V , I =-130A Gate threshold voltage -1.0 -1.5 -2.0 GS(th) DS GS D V =-24V, V =0V, DS GS Zero gate voltage drain current I - -0.03 -1 A DSS T =25C j V =-24V, V =0V, DS GS - -10 -100 2) T =125C j I V =-16V, V =0V Gate-source leakage current - - -100 nA GSS GS DS R V =-4.5V, I =-40A Drain-source on-state resistance - 8.7 12 mW DS(on) GS D V =-10V, I =-80A - 5.6 6.8 GS D Rev. 2.0 page 2 2018-02-15