IPD80R1K4CEATMA1 Infineon

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 800V CoolMOS CE Power Transistor IPx80R1K4CE Data Sheet Rev. 2.3 Final Power Management & Multimarket800V CoolMOS CE Power Transistor IPD80R1K4CE, IPU80R1K4CE DPAK IPAK 1 Description tab tab CoolMOS CE is a revolutionary technology for high voltage power MOSFETs. The high voltage capability combines safety with performance 2 and ruggedness to allow stable designs at highest efficiency level. 1 1 2 3 3 CoolMOS 800V CE comes with a selected package choice offering the benefit of reduced system costs and higher power density designs. Drain Features Pin 2 High voltage technology Extreme dv/dt rated Gate High peak current capability Pin 1 Low gate charge Low effective capacitances Source Qualified according to JEDEC Standard Pin 3 Pb-free lead plating RoHS comp liant halogen free mold compound Benefits Increased power density solutions due to smaller package System cost / size savings due to reduced cooling requirements Higher system reliability due to low operating temperatures Applications LED Lighting for retrofit applications in QR Flyback topology Table 1 Key Performance Parameters Parameter Value Unit VDS Tj=25C 800 V R 1.4 DS(on),max Q 23 nC g,typ I 12 A D,pulse V 3 V GS(th),typ C 51 pF O(tr),typ Type / Ordering Code Package Marking Related Links IPD80R1K4CE PG-TO 252 8R1K4CE see Appendix A IPU80R1K4CE PG-TO 251 Final Data Sheet 2 Rev. 2.3, 2020-05-20