IPG20N06S2L-50
OptiMOS Power-Transistor
Product Summary
V 55 V
DS
4)
50
m
R
DS(on),max
I 20 A
D
Features
Dual N-channel Logic Level - Enhancement mode
PG-TDSON-8-4
AEC Q101 qualified
MSL1 up to 260C peak reflow
175C operating temperature
Green Product (RoHS compliant)
100% Avalanche tested
Type Package Marking
IPG20N06S2L-50 PG-TDSON-8-4 2N06L50
Maximum ratings, at T =25 C, unless otherwise specified
j
Value
Parameter Symbol Conditions Unit
Continuous drain current
1)
I
T =25 C, V =10 V 20 A
D
2) C GS
one channel active
T =100 C, V =10 V 16
C GS
2)
Pulsed drain current
I
- 80
D,pulse
one channel active
2, 4)
E I =10A 60 mJ
Avalanche energy, single pulse AS D
4)
I
- 15 A
Avalanche current, single pulse AS
V
Gate source voltage - 20 V
GS
Power dissipation
P T =25 C
51 W
tot C
one channel active
T , T
Operating and storage temperature - -55 ... +175 C
j stg
IEC climatic category; DIN IEC 68-1 - - 55/175/56
Rev. 1.0 page 1 2009-09-07 IPG20N06S2L-50
Parameter Symbol Conditions Values Unit
min. typ. max.
2)
Thermal characteristics
Thermal resistance, junction - case R - - - 2.9 K/W
thJC
R
SMD version, device on PCB minimal footprint - 100 -
thJA
2 3)
-60 -
6 cm cooling area
Electrical characteristics, at T =25 C, unless otherwise specified
j
Static characteristics
V V =0 V, I = 1 mA
Drain-source breakdown voltage 55 - - V
(BR)DSS GS D
V V =V , I =19 A
Gate threshold voltage 1.2 1.6 2.0
GS(th) DS GS D
V =55 V, V =0 V,
DS GS
4)
I
- 0.01 1 A
Zero gate voltage drain current DSS
T =25 C
j
V =55 V, V =0 V,
DS GS
- 1 100
2)
T =125 C
j
4)
I V =20 V, V =0 V
- 1 100 nA
Gate-source leakage current GSS GS DS
4)
R V =4.5 V, I =10A
-50 60 m
Drain-source on-state resistance DS(on) GS D
V =10 V, I =15A -39 50
GS D
Rev. 1.0 page 2 2009-09-07