IPG20N06S2L-65 OptiMOS Power-Transistor Product Summary V 55 V DS 3) 65 m R DS(on),max I 20 A D Features Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPG20N06S2L-65 PG-TDSON-8-4 2N06L65 Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I T =25 C, V =10 V 20 A D C GS 1) one channel active T =100 C, V =10 V 14 C GS 1) Pulsed drain current I - 80 D,pulse one channel active 1, 3) E I =10A 40 mJ Avalanche energy, single pulse AS D 3) I - 15 A Avalanche current, single pulse AS V Gate source voltage - 20 V GS Power dissipation P T =25 C 43 W tot C one channel active T , T Operating and storage temperature - -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2009-09-07 IPG20N06S2L-65 Parameter Symbol Conditions Values Unit min. typ. max. 1) Thermal characteristics Thermal resistance, junction - case R - - - 3.5 K/W thJC R SMD version, device on PCB minimal footprint - 100 - thJA 2 2) -60 - 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I = 1 mA Drain-source breakdown voltage 55 - - V (BR)DSS GS D V V =V , I =14 A Gate threshold voltage 1.2 1.6 2.0 GS(th) DS GS D V =55 V, V =0 V, DS GS 3) I - 0.01 1 A Zero gate voltage drain current DSS T =25 C j V =55 V, V =0 V, DS GS - 1 100 2) T =125 C j 3) I V =20 V, V =0 V - 1 100 nA Gate-source leakage current GSS GS DS 3) R V =4.5 V, I =7.5A -67 79 m Drain-source on-state resistance DS(on) GS D V =10 V, I =15A -53 65 GS D Rev. 1.0 page 2 2009-09-07