IPG20N06S4L-11
OptiMOS -T2 Power-Transistor
Product Summary
V 60 V
DS
4)
11.2
mW
R
DS(on),max
I 20 A
D
Features
Dual N-channel Logic Level - Enhancement mode
PG-TDSON-8-4
AEC Q101 qualified
MSL1 up to 260C peak reflow
175C operating temperature
Green Product (RoHS compliant)
100% Avalanche tested
Type Package Marking
IPG20N06S4L-11 PG-TDSON-8-4 4N06L11
Maximum ratings, at T =25 C, unless otherwise specified
j
Value
Parameter Symbol Conditions Unit
Continuous drain current
1)
I
T =25 C, V =10 V 20 A
D
C GS
one channel active
T =100 C,
C
20
2)
V =10 V
GS
2)
Pulsed drain current
I
- 80
D,pulse
one channel active
2, 4)
E I =10A 165 mJ
Avalanche energy, single pulse AS D
4)
I
- 15 A
Avalanche current, single pulse AS
V
Gate source voltage - 16 V
GS
Power dissipation
P T =25 C
65 W
tot C
one channel active
T , T
Operating and storage temperature - -55 ... +175 C
j stg
Rev. 1.0 page 1 2010-10-05IPG20N06S4L-11
Parameter Symbol Conditions Values Unit
min. typ. max.
2)
Thermal characteristics
Thermal resistance, junction - case R - - - 2.3 K/W
thJC
R
SMD version, device on PCB minimal footprint - 100 -
thJA
2 3)
- 60 -
6 cm cooling area
Electrical characteristics, at T =25 C, unless otherwise specified
j
Static characteristics
V V =0 V, I = 1 mA
Drain-source breakdown voltage 60 - - V
(BR)DSS GS D
V V =V , I = 28A
Gate threshold voltage 1.2 1.7 2.2
GS(th) DS GS D
V =60 V, V =0 V,
DS GS
4)
I
- 0.01 1 A
Zero gate voltage drain current DSS
T =25 C
j
V =60 V, V =0 V,
DS GS
- 5 100
2)
T =125 C
j
4)
I V =16 V, V =0 V
- - 100 nA
Gate-source leakage current GSS GS DS
4)
R V =4.5 V, I =10 A
- 12.5 15.8 mW
Drain-source on-state resistance DS(on) GS D
V =10 V, I =17 A - 9.5 11.2
GS D
Rev. 1.0 page 2 2010-10-05