IPG20N10S4-36A OptiMOS -T2 Power-Transistor Product Summary V 100 V DS R 4) 36 mW DS(on),max I 20 A D Features Dual N-channel Normal Level - Enhancement mode PG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI) Type Package Marking IPG20N10S4-36A PG-TDSON-8-10 4N1036 Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current 1) I T =25C, V =10V 20 A D C GS one channel active T =100C, C 17 2) V =10V GS 2) Pulsed drain current I - 80 D,pulse one channel active 2, 4) E I =10A 60 mJ Avalanche energy, single pulse AS D 4) I - 15 A Avalanche current, single pulse AS V Gate source voltage - 20 V GS Power dissipation P T =25C 43 W tot C one channel active Operating and storage temperature T , T - -55 ... +175 C j stg Rev. 1.1 page 1 2015-04-13IPG20N10S4-36A Values Parameter Symbol Conditions Unit min. typ. max. 2, 4) Thermal characteristics Thermal resistance, junction - case R - - - 3.5 K/W thJC SMD version, device on PCB R minimal footprint - 100 - thJA 2 3) - 60 - 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I = 1mA 100 - - V (BR)DSS GS D V V =V , I =16A Gate threshold voltage 2.0 2.7 3.5 GS(th) DS GS D V =100V, V =0V, DS GS 4) I - 0.01 1 A Zero gate voltage drain current DSS T =25C j V =100V, V =0V, DS GS - 1 100 2) T =125C j 4) I V =20V, V =0V - - 100 nA Gate-source leakage current GSS GS DS 4) R V =10V, I =17 A - 31 36 mW Drain-source on-state resistance DS(on) GS D Rev. 1.1 page 2 2015-04-13