IPI041N12N3 G IPP041N12N3 G IPB038N12N3 G TM OptiMOS 3 Power-Transistor Product Summary Features V 120 V DS N-channel, normal level R 3.8 mW DS(on),max (TO-263) Excellent gate charge x R product (FOM) DS(on) I 120 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating RoHS compliant, halogen free 1) Qualified according to JEDEC for target application Ideal for high-frequency switching and synchronous rectification Type IPB038N12N3 G IPI041N12N3 G IPP041N12N3 G Package PG-TO263-3 PG-TO262-3 PG-TO220-3 Marking 038N12N 041N12N 041N12N Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 2) I Continuous drain current T =25C 120 A D C T =100C 120 C 3) I T =25C 480 Pulsed drain current D,pulse C E I =100A, R =25W Avalanche energy, single pulse 900 mJ AS D GS 4) V 20 V Gate source voltage GS Power dissipation P T =25C 300 W tot C T , T Operating and storage temperature -55 ... 175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 Rev. 2.3 page 1 2014-04-15 IPI041N12N3 G IPP041N12N3 G IPB038N12N3 G Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 0.5 K/W thJC Thermal resistance, R minimal footprint - - 62 thJA 2 5) junction - ambient - - 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I =1mA 120 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =270A 2 3 4 GS(th) DS GS D V =100 V, V =0V, DS GS Zero gate voltage drain current I - 0.1 1 A DSS T =25C j V =100V, V =0V, DS GS - 10 100 T =125C j Gate-source leakage current I V =20V, V =0V - 1 100 nA GSS GS DS R V =10V, I =100A Drain-source on-state resistance - 3.5 4.1 mW DS(on) GS D V =10V, I =100A, GS D - 3.2 3.8 TO263 Gate resistance R - 1.4 - W G V >2 I R , DS D DS(on)max g Transconductance 83 165 - S fs I =100A D 1) J-STD20 and JESD22 2) Current is limited by bondwire with an R =0.5 K/W the chip is able to carry 182 A. thJC 3) See figure 3 4) T =150 C and duty cycle D=0.01 for V <-5V jmax gs 5) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.3 page 2 2014-04-15