IPI045N10N3 G Infineon

IPP045N10N3 G MOSFET TO-220-3 OptiMOS 3 Power-Transistor , 100 V tab Features N-channel, normal level Excellent gate charge x RDS(on) product (FOM) Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating RoHS compliant 1) Qualified according to JEDEC for target application Ideal for high-frequency switching and synchronous rectification Halogen-free according to IEC61249-2-21 Drain Table 1 Key Performance Parameters Pin 2, Tab Parameter Value Unit V 100 V DS Gate Pin 1 RDS(on),max 4.5 m Source Pin 3 I 137 A D Type / Ordering Code Package Marking Related Links IPP045N10N3 G PG-TO 220-3 045N10N - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev. 2.9, 2017-07-28 OptiMOS 3 Power-Transistor, 100 V IPP045N10N3 G Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 3 Electrical characteristics . 3 Electrical characteristics diagrams . 5 Package Outlines 9 Revision History 10 Trademarks . 10 Disclaimer 10 Final Data Sheet 2 Rev. 2.9, 2017-07-28