IPB08CN10N G IPI08CN10N G IPP08CN10N G OptiMOS 2 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R 8.2 m DS(on),max (TO263) Excellent gate charge x R product (FOM) DS(on) I 95 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating RoHS compliant 1) Qualified according to JEDEC for target application Ideal for high-frequency switching and synchronous rectification Type IPB08CN10N G IPI08CN10N G IPP08CN10N G Package PG-TO263-3 PG-TO262-3 PG-TO220-3 08CN10N 08CN10N 08CN10N Marking Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 C Continuous drain current 95 A D C T =100 C 68 C 2) I T =25 C Pulsed drain current 380 D,pulse C Avalanche energy, single pulse E I =95 A, R =25 262 mJ AS D GS I =95 A, V =80 V, D DS Reverse diode dv /dt dv /dt di /dt =100 A/s, 6 kV/s T =175 C j,max 3) V 20 V Gate source voltage GS P T =25 C Power dissipation 167 W tot C Operating and storage temperature T , T -55 ... 175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 Rev. 1.06 page 1 2008-06-23IPB08CN10N G IPI08CN10N G IPP08CN10N G Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 0.9 K/W thJC R 4) minimal footprint - - 62 thJA Thermal resistance, junction - ambient (TO220, TO262, TO263) 5) 6 cm2 cooling area -- 40 Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0 V, I =1 mA 100 - - V (BR)DSS GS D V V =V , I =130 A Gate threshold voltage 234 GS(th) DS GS D V =100 V, V =0 V, DS GS Zero gate voltage drain current I - 0.1 1 A DSS T =25 C j V =100 V, V =0 V, DS GS - 10 100 T =125 C j I V =20 V, V =0 V Gate-source leakage current - 1 100 nA GSS GS DS V =10 V, I =95 A, GS D Drain-source on-state resistance R - 6.1 8.2 m DS(on) (TO263) V =10 V, I =95 A, GS D - 6.4 8.5 (TO220, TO262) Gate resistance R - 1.5 - G V >2 I R , DS D DS(on)max g Transconductance 57 113 - S fs I =95 A D 1) J-STD20 and JESD22 2) See figure 3 3) T =150 C and duty cycle D=0.01 for V <-5V jmax gs 4) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.06 page 2 2008-06-23