IPB120N08S4-04 IPI120N08S4-04, IPP120N08S4-04 OptiMOS -T2 Power-Transistor Product Summary V 80 V DS R (SMD version) 4.1 mW DS(on),max I 120 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB120N08S4-04 PG-TO263-3-2 4N0804 IPI120N08S4-04 PG-TO262-3-1 4N0804 IPP120N08S4-04 PG-TO220-3-1 4N0804 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 1) I Continuous drain current T =25C, V =10V 120 A D C GS 2) 108 T =100C, V =10V C GS 2) I T =25C 480 Pulsed drain current D,pulse C 2) E I =60A 310 mJ Avalanche energy, single pulse AS D I Avalanche current, single pulse - 99 A AS Gate source voltage V - 20 V GS Power dissipation P T =25C 179 W tot C T , T Operating and storage temperature - -55 ... +175 C j stg Rev. 1.0 page 1 2014-06-20IPB120N08S4-04 IPI120N08S4-04, IPP120N08S4-04 Parameter Symbol Conditions Values Unit min. typ. max. 2) Thermal characteristics Thermal resistance, junction - case R - - - 0.84 K/W thJC Thermal resistance, junction - R - - - 62 thJA ambient, leaded R SMD version, device on PCB minimal footprint - - 62 thJA 2 3) - - 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I = 1mA Drain-source breakdown voltage 80 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =120A 2.0 3.0 4.0 GS(th) DS GS D Zero gate voltage drain current I V =80V, V =0V - 0.03 1 A DSS DS GS V =80V, V =0V, DS GS - 10 200 2) T =125C j I V =20V, V =0V Gate-source leakage current - - 100 nA GSS GS DS Drain-source on-state resistance R V =10V, I =100A - 3.8 4.4 mW DS(on) GS D V =10V, I =100A, GS D - 3.5 4.1 SMD version Rev. 1.0 page 2 2014-06-20