IPI60R099CPA TM CoolMOS Power Transistor Product Summary V 600 V DS R 0.105 DS(on),max Q 60 nC g,typ Features Worldwide best Rds,on in TO262 Ultra low gate charge PG-TO262-3-1 Extreme dv/dt rated High peak current capability Automotive AEC Q101 qualified Green package (RoHS compliant) CoolMOS CPA is specially designed for: DC/DC converters for Automotive Applications Type Package Marking IPI60R099CPA PG-TO262-3-1 6R099A Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 C 31 Continuous drain current A D C 19 T =100 C C 1) I T =25 C 93 Pulsed drain current D,pulse C E I =11 A, V =50 V Avalanche energy, single pulse 800 mJ AS D DD 1),2) E I =11 A, V =50 V 1.2 Avalanche energy, repetitive t AR D DD AR 1),2) I 11 A Avalanche current, repetitive t AR AR V =0...480 V 50 MOSFET dv /dt ruggedness dv /dt V/ns DS V 20 Gate source voltage static V GS Power dissipation P T =25 C 255 W tot C Operating temperature T -40 150 C j -40 ... 150 T Storage temperature stg Rev. 2.1 page 1 2009-03-25IPI60R099CPA Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I Continuous diode forward current 18 A S T =25 C C 1) I 93 Diode pulse current S,pulse 3) dv /dt 15 V/ns Reverse diode dv /dt Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R - - 0.5 K/W thJC Thermal resistance, junction - R leaded - - 62 thJA ambient Soldering temperature, 1.6 mm (0.063 in.) T - - 260 C sold wavesoldering only allowed at leads from case for 10 s MSL1, reflow acc. to Soldering temperature, T IPC-JEDEC J-STD- - - 245 C sold reflow soldering 020C Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0 V, I =250 A 600 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =1.2 mA 2.5 3 3.5 GS(th) DS GS D V =600 V, V =0 V, DS GS Zero gate voltage drain current I -- 5A DSS T =25 C j Gate-source leakage current I V =20 V, V =0 V - - 100 nA GSS GS DS V =10 V, I =18 A, GS D R Drain-source on-state resistance - 0.09 0.105 DS(on) T =25 C j V =10 V, I =18 A, GS D - 0.24 - T =150 C j Gate resistance R f =1 MHz, open drain - 1.3 - G Rev. 2.1 page 2 2009-03-25