X-On Electronics has gained recognition as a prominent supplier of IPL65R070C7 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPL65R070C7 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPL65R070C7 Infineon

IPL65R070C7 electronic component of Infineon
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See Product Specifications
Part No.IPL65R070C7
Manufacturer: Infineon
Category: MOSFETs
Description: Infineon Technologies MOSFET HIGH POWER BEST IN CLASS
Datasheet: IPL65R070C7 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 6.842 ea
Line Total: USD 6.84 
Availability - 2452
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 8.2776
10 : USD 8.0619
30 : USD 7.9188
100 : USD 7.7757

2452
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 6.842
10 : USD 5.962
25 : USD 5.478
100 : USD 5.115
250 : USD 4.862
500 : USD 4.631
1000 : USD 4.279
3000 : USD 4.191
6000 : USD 4.103

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
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Brand
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Length
Transistor Type
Width
Cnhts
Fall Time
Hts Code
Mxhts
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We are delighted to provide the IPL65R070C7 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPL65R070C7 and other electronic components in the MOSFETs category and beyond.

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IPL65R070C7 MOSFET ThinPAK 8x8 650V CoolMOS C7 Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching superjunction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability. Features Increased MOSFET dv/dt ruggedness Drain Pin 5 Better efficiency due to best in class FOM R *E and R *Q DS(on) oss DS(on) g ThinPAK SMD Package with very low parasitic inductance to enable fast and reliable switching with minimum of size to increase power-density Gate Pin 1 Easy to use/drive due to driver source pin for better control of the gate. Driver Source Pb-free plating, halogen free mold compound Power Pin 2 Source Qualified for industrial grade applications according to JEDEC (J-STD20 Pin 3,4 and JESD22) Benefits Enabling higher system efficiency by lower switching losses Enabling higher frequency / increased power density solutions System cost / size savings due to reduced cooling requirements Higher system reliability due to lower operating temperatures Potential applications PFC stages and hard switching PWM stages for e.g. Computing, Server, Telecom, UPS and Solar. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit V T 700 V DS j,max R 70 m DS(on),max Q 64 nC g,typ I 145 A D,pulse E 400V 8 J oss Body diode diF/dt 60 A/s Type / Ordering Code Package Marking Related Links IPL65R070C7 PG-VSON-4 65C7070 see Appendix A Final Data Sheet 1 Rev. 2.1, 2017-08-29650V CoolMOS C7 Power Transistor IPL65R070C7 Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 4 Electrical characteristics . 5 Electrical characteristics diagrams . 7 Test Circuits . 11 Package Outlines . 12 Appendix A 13 Revision History 14 Trademarks . 14 Disclaimer 14 Final Data Sheet 2 Rev. 2.1, 2017-08-29

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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