MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOSC7
650VCoolMOSC7PowerTransistor
IPL65R130C7
DataSheet
Rev.2.0
Final
PowerManagement&Multimarket650VCoolMOSC7PowerTransistor
IPL65R130C7
ThinPAK8x8
1Description
CoolMOSisarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.
CoolMOSC7seriescombinestheexperienceoftheleadingSJ
MOSFETsupplierwithhighclassinnovation.Theproductportfolio
providesallbenefitsoffastswitchingsuperjunctionMOSFETsoffering
betterefficiency,reducedgatecharge,easyimplementationand
outstandingreliability.
Features
Drain
IncreasedMOSFETdv/dtruggedness
Pin 5
BetterefficiencyduetobestinclassFOMR *E andR *Q
DS(on) oss DS(on) g
ThinPAKSMDPackagewithverylowparasiticinductancetoenablefast
andreliableswitchingwithminimumofsizetoincreasepower-density
Gate
Pin 1
Easytouse/drivedueto driversourcepinforbettercontrolofthegate.
Pb-freeplating,halogenfreemoldcompound
Driver
QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20
Power
Source
Source
andJESD22)
Pin 2
Pin 3,4
Benefits
Enablinghighersystemefficiencybylowerswitchinglosses
Enablinghigherfrequency/increasedpowerdensitysolutions
Systemcost/sizesavingsduetoreducedcoolingrequirements
Highersystemreliabilityduetoloweroperatingtemperatures
Applications
PFCstagesandhardswitchingPWMstagesfore.g.Computing,Server,
Telecom,UPSandSolar.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter Value Unit
V @ T 700 V
DS j,max
R 130 m
DS(on),max
Q 35 nC
g.typ
ID,pulse 75 A
E @400V 4.2 J
oss
Body diode di/dt 55 A/s
Type/OrderingCode Package Marking RelatedLinks
IPL65R130C7 PG-VSON-4 65C7130 see Appendix A
Final Data Sheet 2 Rev.2.0,2013-04-29