IPL65R1K0C6SATMA1 Infineon

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPL65R1K0C6S Data Sheet Rev. 2.0 Final Power Management & Multimarket650V CoolMOS C6 Power Transistor IPL65R1K0C6S ThinPAK 5x6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler. Features Extremely low losses due to very low FOM Rdson*Qg and Eoss Very high commutation ruggedness Easy to use/drive Pb-free plating, Halogen free mold compound Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22) Applications PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS. Please note: For MOSFET paralleling the use of ferrite beads on the gate or seperate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit V T 700 V DS j,max R 1 DS(on),max Qg,typ 15 nC ID,pulse 12.3 A E 400V 1.5 J oss Body diode di/dt 500 A/s Type / Ordering Code Package Marking Related Links IPL65R1K0C6S ThinPAK 5x6 SMD 65C61K0 see Appendix A Final Data Sheet 2 Rev. 2.0, 2014-07-08