IPLU250N04S4-1R7 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 1.7 mW DS(on) I 250 A D Features H-PSOF-8-1 N-channel - Enhancement mode Tab AEC qualified 8 MSL1 up to 260C peak reflow 1 Tab 175C operating temperature Green product (RoHS compliant) 100% lead free 1 8 Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPLU250N04S4-1R7 H-PSOF-8-1 4N041R7 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 1) I Continuous drain current T =25C, V =10V 250 A D C GS 2) T =100C, V =10V 180 C GS 2) I T =25C 1000 Pulsed drain current D,pulse C 2) E I =125A 170 mJ Avalanche energy, single pulse AS D Avalanche current, single pulse I - 250 A AS V Gate source voltage - 20 V GS P T =25C Power dissipation 188 W tot C T , T Operating and storage temperature - -55 ... +175 C j stg Rev. 1.0 page 1 2014-12-08IPLU250N04S4-1R7 Values Parameter Symbol Conditions Unit min. typ. max. 2) Thermal characteristics Thermal resistance, junction - case R - - - 0.8 K/W thJC SMD version, device on PCB R minimal footprint - - 62 thJA 2 3) - - 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V =0V, GS V Drain-source breakdown voltage 40 - - V (BR)DSS I =1mA D V V =V , I =80A Gate threshold voltage 2.0 3.0 4.0 GS(th) DS GS D V =40V, V =0V, DS GS I Zero gate voltage drain current - 0.1 10 A DSS T =25C j V =18V, V =0V, DS GS - 1 20 2) T =85C j I V =20V, V =0V Gate-source leakage current - - 100 nA GSS GS DS R V =10V, I =100A Drain-source on-state resistance - 1.2 1.7 m DS(on) GS D Rev. 1.0 page 2 2014-12-08