X-On Electronics has gained recognition as a prominent supplier of IPN60R600P7SATMA1 MOSFET across the USA, India, Europe, Australia, and various other global locations. IPN60R600P7SATMA1 MOSFET are a product manufactured by Infineon. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

IPN60R600P7SATMA1 Infineon

IPN60R600P7SATMA1 electronic component of Infineon
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See Product Specifications
Part No.IPN60R600P7SATMA1
Manufacturer: Infineon
Category: MOSFET
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; 7W; PG-SOT223
Datasheet: IPN60R600P7SATMA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.9015 ea
Line Total: USD 4.51

Availability - 0
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 3000
Multiples : 3000
3000 : USD 0.3671
6000 : USD 0.3549
9000 : USD 0.3393
24000 : USD 0.3372
30000 : USD 0.3339

0
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 5
Multiples : 1
5 : USD 0.9015
50 : USD 0.7412
100 : USD 0.6134
500 : USD 0.4365
1500 : USD 0.4119

0
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 3000
Multiples : 3000
3000 : USD 0.4253
6000 : USD 0.3937
9000 : USD 0.3937
12000 : USD 0.3937
15000 : USD 0.3937

0
Ship by Thu. 08 Aug to Mon. 12 Aug
MOQ : 1
Multiples : 1
1 : USD 0.7345
10 : USD 0.6398
100 : USD 0.4537
500 : USD 0.3912
1000 : USD 0.3422
3000 : USD 0.3076
6000 : USD 0.301
9000 : USD 0.2909
24000 : USD 0.2876

0
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 1
Multiples : 1
1 : USD 0.9234
5 : USD 0.5148
25 : USD 0.4446
36 : USD 0.3744
98 : USD 0.351

   
Manufacturer
Product Category
Technology
Features Of Semiconductor Devices
Polarisation
Mounting
Case
Type Of Transistor
Drain-Source Voltage
Drain Current
On-State Resistance
Gate-Source Voltage
Gate Charge
Power Dissipation
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We are delighted to provide the IPN60R600P7SATMA1 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPN60R600P7SATMA1 and other electronic components in the MOSFET category and beyond.

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IPN60R600P7S MOSFET PG-SOT223 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g. very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses make switching applications even more efficient, more compact and much cooler. Features Drain Pin 2, Tab Suitable for hard and soft switching (PFC and LLC) due to an outstanding commutation ruggedness Gate Significant reduction of switching and conduction losses Pin 1 Excellent ESD robustness >2kV (HBM) for all products Better RDS(on)/package products compared to competition enabled by a Source low R *A (below 1Ohm*mm) DS(on) Pin 3 Product validation acc. JEDEC Standard Benefits Ease of use and fast design-in through low ringing tendency and usage across PFC and PWM stages Simplified thermal management due to low switching and conduction losses Increased power density solutions enabled by using products with smaller footprint and higher manufacturing quality due to >2 kV ESD protection Suitable for a wide variety of applications and power ranges Potential applications PFC stages, hard switching PWM stages and resonant switching stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit VDS Tj,max 650 V RDS(on),max 600 m Q 9 nC g,typ I 16 A D,pulse E 400V 1.1 J oss Body diode di /dt 900 A/s F Type / Ordering Code Package Marking Related Links IPN60R600P7S PG-SOT223 60S600 see Appendix A Final Data Sheet 1 Rev. 2.1, 2018-04-25600V CoolMOS P7 Power Transistor IPN60R600P7S Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 4 Electrical characteristics . 5 Electrical characteristics diagrams . 7 Test Circuits . 11 Package Outlines . 12 Appendix A 13 Revision History 14 Trademarks . 14 Disclaimer 14 Final Data Sheet 2 Rev. 2.1, 2018-04-25

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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