X-On Electronics has gained recognition as a prominent supplier of IPN70R1K2P7SATMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPN70R1K2P7SATMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPN70R1K2P7SATMA1 Infineon

IPN70R1K2P7SATMA1 electronic component of Infineon
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Part No.IPN70R1K2P7SATMA1
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET CONSUMER
Datasheet: IPN70R1K2P7SATMA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.2509 ea
Line Total: USD 752.7 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.2509
6000 : USD 0.2384
9000 : USD 0.2274
15000 : USD 0.2271
21000 : USD 0.2262
24000 : USD 0.2261

0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 0.3233
10 : USD 0.3164
25 : USD 0.295
100 : USD 0.2397
250 : USD 0.2348
500 : USD 0.2348
1000 : USD 0.2348

0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 0.8266
10 : USD 0.6895
100 : USD 0.4749
500 : USD 0.3938
1000 : USD 0.3405
5000 : USD 0.2762

0
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 1.8164
10 : USD 0.8742
25 : USD 0.6222
100 : USD 0.4872
500 : USD 0.3857
1000 : USD 0.3088
3000 : USD 0.2788

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IPN70R1K2P7SATMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPN70R1K2P7SATMA1 and other electronic components in the MOSFETs category and beyond.

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IPN70R1K2P7S MOSFET PG-SOT223 700V CoolMOS P7 Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc. The new series provides all the benefits of a fast switching Superjunction MOSFET, combined with an excellent price/performance ratio and state of the art ease-of-use level. The technology meets highest efficiency standards and supports high power density, enabling customers going towards very slim designs. Drain Pin 2, Tab Features Extremely low losses due to very low FOM R *Q and R *E DS(on) g DS(on) oss Gate Excellent thermal behavior Pin 1 Integrated ESD protection diode Low switching losses (E ) oss Source Product validation acc. JEDEC Standard Pin 3 Benefits Cost competitive technology Lower temperature High ESD ruggedness Enables efficiency gains at higher switching frequencies Enables high power density designs and small form factors Potential applications Recommended for Flyback topologies for example used in Chargers, Adapters, Lighting Applications, etc. Please note: For MOSFET paralleling the use of ferrite beads on the gate or seperate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit V T 700 V DS j=25C R 1.2 DS(on),max Q 4.8 nC g,typ I 9.4 A D,pulse E 400V 0.7 J oss V(GS)th,typ 3 V ESD class (HBM) 1C Type / Ordering Code Package Marking Related Links IPN70R1K2P7S PG-SOT223 70S1K2 see Appendix A Final Data Sheet 1 Rev. 2.1, 2018-02-12700V CoolMOS P7 Power Transistor IPN70R1K2P7S Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 3 Electrical characteristics . 4 Electrical characteristics diagrams . 6 Test Circuits . 10 Package Outlines . 11 Appendix A 12 Revision History 13 Trademarks . 13 Disclaimer 13 Final Data Sheet 2 Rev. 2.1, 2018-02-12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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