IPN95R1K2P7 MOSFET PG-SOT223 950V CoolMOS P7 SJ Power Device The latest 950V CoolMOS P7 series sets a new benchmark in 950V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineons over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E reduced Q , C , and C DS(on) oss g iss oss Best-in-class SOT-223 R DS(on) Best-in-class V(GS)th of 3V and smallest V (GS)th variation of 0.5V Integrated Zener Diode ESD protection Best-in-class CoolMOS quality and reliability Fully optimized portfolio Drain Pin 2 Benefits *1 Gate Best-in-class performance Pin 1 *2 Enabling higher power density designs, BOM savings and lower assembly costs Source *1: Internal body diode *2: Integrated ESD diode Easy to drive and to parallel Pin 3 Better production yield by reducing ESD related failures Less production issues and reduced field returns Easy to select right parts for fine tuning of designs Potential applications Recommended for flyback topologies for LED Lighting, low power Chargers and Adapters, Smart Meter, AUX power and Industrial power. Also suitable for PFC stage in Consumer and Solar applications. Product Validation: Fully qualified acc. JEDEC for Industrial Applications Please note: For MOSFET paralleling the use of ferrite beads on the gate or seperate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit V T 950 V DS j=25C R 1.2 DS(on),max Qg,typ 15 nC ID 6 A E 500V 1.3 J oss V 3 V GS(th),typ ESD class (HBM) 2 - Type / Ordering Code Package Marking Related Links IPN95R1K2P7 PG-SOT223 95R1K2 see Appendix A Final Data Sheet 1 Rev. 2.0, 2018-06-01950V CoolMOS P7 SJ Power Device IPN95R1K2P7 Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 4 Electrical characteristics . 5 Electrical characteristics diagrams . 7 Test Circuits . 11 Package Outlines . 12 Appendix A 13 Revision History 14 Trademarks . 14 Disclaimer 14 Final Data Sheet 2 Rev. 2.0, 2018-06-01