X-On Electronics has gained recognition as a prominent supplier of IPP020N06NAKSA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPP020N06NAKSA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPP020N06NAKSA1 Infineon

Hot IPP020N06NAKSA1 electronic component of Infineon
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Part No.IPP020N06NAKSA1
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO220-3
Datasheet: IPP020N06NAKSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
20: USD 1.599 ea
Line Total: USD 31.98 
Availability - 485
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ: 20  Multiples: 1
Pack Size: 1
Availability Price Quantity
485
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 20
Multiples : 1
20 : USD 1.599
40 : USD 1.599
150 : USD 1.599
400 : USD 1.599
1500 : USD 1.599

285
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 3.146
10 : USD 3.025
25 : USD 2.057
100 : USD 1.936
250 : USD 1.804
500 : USD 1.76
1000 : USD 1.727
5000 : USD 1.683

5820
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 500
Multiples : 500
500 : USD 2.1976

1350
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 7
Multiples : 1
7 : USD 5.8175
10 : USD 4.6638
50 : USD 4.4038
100 : USD 3.38
200 : USD 3.1688
500 : USD 3.0712
1000 : USD 2.99

   
Manufacturer
Product Category
Technology
Polarisation
Case
Mounting
Kind Of Package
Type Of Transistor
Drain Current
Gate-Source Voltage
Drain-Source Voltage
On-State Resistance
Power Dissipation
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We are delighted to provide the IPP020N06NAKSA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPP020N06NAKSA1 and other electronic components in the MOSFETs category and beyond.

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Type IPP020N06N TM OptiMOS Power-Transistor Features Product Summary Optimized for high performance SMPS, e.g. sync. rec. V 60 V DS 100% avalanche tested R 2.0 mW DS(on),max Superior thermal resistance I 120 A D N-channel Q nC OSS 119 1) Qualified according to JEDEC for target applications Q (0V..10V) nC G 106 Pb-free lead plating RoHS compliant Halogen-free according to IEC61249-2-21 PG-TO220-3 Type Package Marking IPP020N06N PG-TO220-3 020N06N Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit I V =10 V, T =25C Continuous drain current 120 A D GS C V =10 V, T =100C 120 GS C V =10 V, T =25C, GS C 29 R =50K/W thJA 2) I T =25C 480 Pulsed drain current D,pulse C 3) E I =100A, R =25W 420 mJ Avalanche energy, single pulse AS D GS V Gate source voltage 20 V GS 1) J-STD20 and JESD22 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information 4) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev.2.3 page 1 2012-12-20IPP020N06N Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit P T =25C Power dissipation 214 W tot C T =25 C, A 3.0 R =50K/W thJA Operating and storage temperature T , T -55 ... 175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case bottom - - 0.7 K/W thJC R Device on PCB minimal footprint - - 62 thJA 4) - - 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I =1mA Drain-source breakdown voltage 60 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =143A 2.1 2.8 3.3 GS(th) DS GS D V =60V, V =0V, DS GS Zero gate voltage drain current I - 0.5 1 A DSS T =25C j V =60V, V =0V, DS GS - 10 100 T =125C j Gate-source leakage current I V =20V, V =0V - 10 100 nA GSS GS DS Drain-source on-state resistance R V =10V, I =100A - 1.8 2 mW DS(on) GS D V =6V, I =25A - 2.1 3 GS D R Gate resistance - 1.6 2.4 W G V >2 I R , DS D DS(on)max g Transconductance 100 210 - S fs I =100A D Rev.2.3 page 2 2012-12-20

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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