Ie R IPP023N04N G IPB023N04N G %& 3 Power-Transistor Product Summary Features V ,( K 9H Q & ( , - 7 B ( + : 8 2 5 . : D6BBEAD:3 =6 ) G6B ,EAA=I R *&+ , >2 H ) Q * E2 =:7:65 2 44 B5: 8 D 7 B D2 B86D 2 AA=:42 D: C I 1( 6 9 Q 492 6= Q B>2 = =6F6= Q . =DB2 = G B6C:CD2 46 R 9 Q F2 =2 496 D6CD65 Q )3 7B66 A=2 D: 8 + , 4 >A=:2 D Q 2 = 86 7B66 2 44 B5: 8 D Type ) )) Package E=%ID*.+%+ E=%ID**(%+ Marking (*+C(,C (*+C(,C Maximum ratings, 2 D T T E =6CC D96BG:C6 CA64:7:65 W Parameter Symbol Conditions Value Unit I V / T T D: E EC 5B2 : 4EBB6 D 1( 6 9 =H 8 V / T T 1( =H 8 * I T T ,(( )E=C65 5B2 : 4EBB6 D 9 aY R 8 + I T T 1( F2 =2 496 4EBB6 D C: 8=6 AE=C6 6H 8 E I R F2 =2 496 6 6B8I C: 8=6 AE=C6 )-( Z 6H 9 =H V 2 D6 C EB46 F =D2 86 q*( K =H ) ,- 2 5 , + 6F A2 86 IPP023N04N G IPB023N04N G Maximum ratings, 2 D T T E =6CC D96BG:C6 CA64:7:65 W Parameter Symbol Conditions Value Unit ) G6B 5:CC:A2 D: P T T )./ L 8 ( A6B2 D: 8 2 5 CD B2 86 D6>A6B2 DEB6 T T T W T 4=:>2 D:4 42 D68 BI Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R -96B>2 = B6C:CD2 46 E 4D: 42 C6 % % (&1 A L U 8 R ,& F6BC: 56F:46 ) >: :>2 = 7 DAB: D U 6 , % % ,( 4>V 4 =: 8 2 B62 Electrical characteristics, 2 D T T E =6CC D96BG:C6 CA64:7:65 W Static characteristics B2 : C EB46 3 B62 <5 G F =D2 86 V V / I > ,( % % K7G 9HH =H 9 V V 4V I W 2 D6 D9B6C9 =5 F =D2 86 * % , = U 9H =H 9 V / V / 9H =H I 16B 82 D6 F =D2 86 5B2 : 4EBB6 D % (&) ) s6 9HH T T W V / V / 9H =H % )( )(( T T W I V / V / 2 D6 C EB46 =62 <2 86 4EBB6 D % )( )(( 6 =HH =H 9H - R V / I % )&1 *&+ B2 : C EB46 CD2 D6 B6C:CD2 46 9 =H 9 2 D6 B6C:CD2 46 R % )&1 % = gV g5*gI gR 9H 9 9 ZNd g I N P QaP N PR /- )-( % H S I 9 * ,66 7:8EB6 7 B > B6 56D2 :=65 : 7 B>2 D: + ,66 7:8EB6 7 B > B6 56D2 :=65 : 7 B>2 D: , 6F:46 >> H >> H >> 6A HI ) + G:D9 4> 6 =2 I6B W > D9:4< 4 AA6B 2 B62 7 B 5B2 : 4 64D: ) :C F6BD:42 = : CD:== 2 :B - & 62 CEB65 7B > 5B2 : D2 3 D C EB46 A: + 6F A2 86