IPP030N10N3 G IPI030N10N3 G OptiMOS 3 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R 3 mW DS(on),max Excellent gate charge x R product (FOM) DS(on) I 100 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating RoHS compliant 1) Qualified according to JEDEC for target application Ideal for high-frequency switching and synchronous rectification Type IPP030N10N3 G IPI030N10N3 G Package PG-TO220-3 PG-TO262-3 Marking 030N10N 030N10N Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit 2) Continuous drain current I 100 A D T =25 C C T =100 C 100 C 2) I T =25 C 400 Pulsed drain current D,pulse C Avalanche energy, single pulse E I =100 A, R =25 W 1000 mJ AS D GS V Gate source voltage 20 V GS P T =25 C Power dissipation 300 W tot C Operating and storage temperature T , T -55 ... 175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 1) J-STD20 and JESD22 2) See figure 3 Rev. 2.1 page 1 2011-07-18IPP030N10N3 G IPI030N10N3 G Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R - - 0.5 K/W thJC R Thermal resistance, minimal footprint - - 62 thJA 2 3) junction - ambient - - 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I =1 mA Drain-source breakdown voltage 100 - - V (BR)DSS GS D V V =V , I =275 A Gate threshold voltage 2 2.7 3.5 GS(th) DS GS D V =100 V, V =0 V, DS GS I Zero gate voltage drain current - 0.1 1 A DSS T =25 C j V =100 V, V =0 V, DS GS - 10 100 T =125 C j I V =20 V, V =0 V Gate-source leakage current - 1 100 nA GSS GS DS R V =10 V, I =100 A Drain-source on-state resistance - 2.6 3 mW DS(on) GS D V =6 V, I =50 A - 3.1 4.8 GS D R Gate resistance - 1.9 - W G V >2 I R , DS D DS(on)max g Transconductance 94 188 - S fs I =100 A D 3) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.1 page 2 2011-07-18