Type IPP039N04L G IPB039N04L G OptiMOS 3 Power-Transistor Product Summary Features V 40 V DS Fast switching MOSFET for SMPS R 3.9 m DS(on),max Optimized technology for DC/DC converters I 80 A D 1) Qualified according to JEDEC for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) 100% Avalanche tested Pb-free plating RoHS compliant Halogen-free according to IEC61249-2-21 Type IPB039N04L G IPP039N04L G Package PG-TO263-3 PG-TO220-3 039N04L 039N04L Marking Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit I V =10 V, T =25 C Continuous drain current 80 A D GS C V =10 V, T =100 C 80 GS C V =4.5 V, T =25 C 80 GS C V =4.5 V, GS 73 T =100 C C 2) I T =25 C Pulsed drain current 400 D,pulse C 3) I T =25 C 80 Avalanche current, single pulse AS C E I =80 A, R =25 Avalanche energy, single pulse 60 mJ AS D GS Gate source voltage V 20 V GS 1) J-STD20 and JESD22 Rev. 1.2 page 1 2009-12-17IPP039N04L G IPB039N04L G Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit P T =25 C Power dissipation 94 W tot C Operating and storage temperature T , T -55 ... 175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 1.6 K/W thJC SMD version, device on PCB R minimal footprint - - 62 thJA 4) -- 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I =1 mA Drain-source breakdown voltage 40 - - V (BR)DSS GS D V V =V , I =45 A Gate threshold voltage 1.2 - 2 GS(th) DS GS D V =40 V, V =0 V, DS GS Zero gate voltage drain current I - 0.1 1 A DSS T =25 C j V =40 V, V =0 V, DS GS - 10 100 T =125 C j Gate-source leakage current I V =20 V, V =0 V - 10 100 nA GSS GS DS 5) Drain-source on-state resistance R V =4.5 V, I =80 A - 4.2 5.2 m DS(on) GS D V =10 V, I =80 A - 3.1 3.9 GS D R Gate resistance - 1.6 - G V >2 I R , DS D DS(on)max Transconductance g 75 151 - S fs I =80 A D 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 5) Measured from drain tab to source pin Rev. 1.2 page 2 2009-12-17